Influence of high temperature annealing on dielectric properties of InSb-SiO2 thin layers

This paper presents the results of AC measurements of InSb-SiO2 nanocomposite obtained by the implantation of In and Sb ions into a thin layer of SiO2. Resistance, capacity, phase angle and dielectric loss factor were measured parameters as a function of temperature in the range from 20 K to 375 K. On this basis, annealing influence on measured parameters and dielectric properties of this material were discussed.