Obtaining Layers of Carbon Nanotubes (CNT) on Etching Silicon

Obtaining Layers of Carbon Nanotubes (CNT) on Etching Silicon
Eryk Rzepka*, Mirosław Kozłowski, Joanna Radomska, Halina Wronka

Tele & Radio Research Institute, Ratuszowa 11, 03-450 Warsaw
*Corresponding author: eryk.rzepka (at) itr.org.pl

Carbon nanotubes layers on etched silicon substrates are perspective materials. We prepared by wet etching method (KOH, 5mol) such Si substrate with surface coved by hillock-like Si objects. Such developed surface is useful for deposition of field emitters based on CNT-Ni film. These hillock-like structures were not distributed uniformly on Si substrates and the etching pattern depended on etching rate and crystallographic orientation of Si. The layers of carbon nanotubes were obtained by PVD (Physical Vapor Deposition) and next in CVD (Chemical Vapor Deposition) processes. Physical Vapor Deposition and Chemical Vapor Deposition processes parameters are described. SEM studies for these layers were performed and they show the topography and morphology of samples in each stage of etching and growth.