Design of circuits of multilevel inverter on IGBT transistors with pulse-amplitude control

This article considers the design of circuits of multilevel inverter on IGBT transistors with pulse-amplitude control.
The output of multilevel inverter on IGBT transistors can produce voltage, which is close to the sinusoidal form. The main task of this multilevel inverter is the conversion of solar energy into electric power of industrial frequency. The analysis of the obtained output curves of the voltage for sinusoidal behavior has been carried out.
The development of renewable energy sources is one of the main factors, stimulating the growth of the power electronics market, requiring continuous increase of efficiency of conversion and reliability.
Currently the field of application of power electronics covers practically all spheres of human activity, fuel and energy complex, industry, transport, communications, life and so on.
This scientific article describes the developed scheme of the multilevel inverter, which allows to obtain at the output the voltage, close to the sinusoidal voltage, and also the regulation of level of the output voltage.
There are two principal ways of improvement of the spectral composition of the curve of the output voltage of inverter by the circuit way:
1) pulse-amplitude modulation of the output voltage curve;
2) pulse-width modulation of the output voltage curve.
In multilevel inverters on IGBT transistors with pulse-amplitude modulation, the formation of the multilevel voltage, approximating a sinusoid, is realized by summing the voltages of power supplies. The best option is considered when the multilevel voltage is applied to the input of the inverter and the sinusoidal voltage is formed at the output of the inverter.