Development of the Construction Sketch of N - Channel MOS - Phototransistor with Bilateral Illumination of Channel and Operation

POSTER
Abstract. In the article the physical mechanism of optical radiation co-operation with semiconductor devices, technological route of making of MOS - phototransistor with bilateral illumination of channel has been considered. Also the optical transducer with frequency output based on the structure of the bipolar-field transistors with negative resistance and MOSFET with bilateral illumination of channel that is a photosensitive element has been considered. A mathematical model of the radiomeasuring optical transducer has been developed.
Keywords: frequency optical transducer, MOS - phototransistor with bilateral illumination of channel, negative resistance.