Modeling and Fabrication of 4H-SiC Schottky Junction

The rapidly growing demand for electronic devices requires using of

alternative semiconductor materials, which could replace conventional silicon.

Silicon carbide has been proposed for these harsh environment applications (high

temperature, high voltage, high power conditions) because of its wide bandgap, its

high temperature operation ability, its excellent thermal and chemical stability, and

its high breakdown electric field strength.

The Schottky barrier diode (SBD) is known as one of the best refined SiC

devices. This paper presents prepared model, simulations and description of

technology of 4H-SiC Schottky junction as well as characterization of fabricated

structures. The model section contains a comparison of two different solutions of

SBD’s construction. Simulations – as a crucial process of designing electronic

devices – have been performed using the ATLAS device of TCAD software. As a

final result the paper shows I–V characteristic of fabricated diodes.

Authors:
Agnieszka Martychowiec
Aleksandra Pedryc
Andrzej Kociubinski

Author: Agnieszka Martychowiec
Conference: Title