Frequency pressure transducer with a sensitivity of MEMs capacitor on the basis of transistor structure with negative resistance

FREQUENCY PRESSURE TRANSDUCER WITH A SENSITIVITY OF MEMS CAPACITOR ON THE BASIS OF TRANSISTOR STRUCTURE WITH NEGATIVE RESISTANCE

In the article the pressure transducer with frequency output based on the structure of the bipolar-field transistors with negative resistance and tenzo sensitive MEMS capacitor has been considered. A mathematical model of the frequency pressure transducer in dynamic regime has been developed that allowed to determine the voltage or current in the circuit at any given moment in time when acting this pressure. Analytical expressions of the conversion function and sensitivity equation has been received. The sensitivity of the developed device is between 0,95kHz/kPa to 1,65kHz/kPa.